ieee nano 2017(fin)

All NEEDs Lab’s papers received best paper award finalists at IEEE-NANO 2017

Activities September 20, 2017

 

Two ECE NEEDs Lab’s papers presented by Sunhae Shin and Esan Jang (advisor: Prof. Kyung Rok Kim) have been awarded as best paper award finalists at the 17th IEEE International Conference on Nanotechnology (IEEE-NANO) which was held in Pittsburgh, USA at July 2017.

 

This IEEE International Conference on Nanotechnology (IEEE-NANO) is the largest conference in the world regarding all kinds of nanotechnology, directly hosted by IEEE Nanotechnology Council. In this year, only 6 papers were awarded as best paper award finalists from 201 oral presentations among over 300 accepted papers. It is outstanding achievement to be awarded as best paper finalists for all 2 papers from UNIST ECE NEEDs Lab as follows:

 

Title: Ultra-Low Standby Power and Static Noise-Immune Standard Ternary Inverter Based on Nanoscale Ternary CMOS Technology

Authors: Sunhae Shin, Jae Won Jeong, Esan Jang and Kyung Rok Kim

Conference: The 17th IEEE International Conference on Nanotechnology

Presentation date: July 27th, 2017

 

ieee nano 2017 5

 

In this paper, ternary CMOS (T-CMOS)-based standard ternary inverter (STI) was experimentally demonstrated for compact and power-scalable multi-valued logic (MVL) circuits. Advanced nanoscale bulk tri-gate ternary FinFET (T-FinFET) shows highly noise-immune STI operation with a larger static noise margin.

 

 

Title: Highly-Sensitive Plasmonic Nano-Ring Transistor for Monolithic Terahertz Active Antenna

Conference: The 17th IEEE International Conference on Nanotechnology

Authors: Min Woo Ryu, Ramesh Patel, Esan Jang, Sang Hyo Ahn, Hyeong Ju Jeon, Mun Seok Choe, Eunmi Choi, Ki jin Han, and Kyung Rok Kim

Presentation date: July 27th, 2017

ieee nano 2017 7

 

In this paper, highly-sensitive silicon plasmonic THz detector based on circular-shape monolithic transistor with active antenna operation is reported for a real-time ‘camera-chip-level’ THz imaging system. This device was integrated in UCRF nano-fabrication cleanroom by full CMOS process.