구성원

교원소개

Research Areas
RF 디바이스 및 시스템, 반도체 소자 및 나노기술, 포토닉스 및 양자
Jaeyong Jeong
정재용

UNIST 반도체 소자 및 3차원 집적 연구실 (지도교수 정재용)은 차세대 반도체 시스템을 위한 고성능 전자소자 및 3차원 집적 기술을 연구합니다. 특히, RF 및 Power 반도체 소자, 극저온 소자, 그리고 3차원 집적 기술을 중심으로 AI, 양자컴퓨팅, 차세대 무선통신 등 미래 핵심 산업을 위한 반도체 기술을 개발하고 있습니다. 소자-회로-3차원 집적을 아우르는 연구를 통해 차세대 반도체 플랫폼을 구현하는 것을 목표로 합니다.

Our lab focuses on developing high-performance semiconductor devices and advanced 3D integration technologies for next-generation semiconductor systems. Our research centers on RF and power semiconductor devices, cryogenic electronics, and heterogeneous 3D integration, targeting key applications in artificial intelligence, quantum computing, and next-generation wireless communications. By bridging device physics, circuit-level implementation, and 3D integration, we aim to realize next-generation semiconductor platforms.

[Curriculum Vitae] • 2026 – present: Assistant Professor, UNIST
• 2025 – 2026: Postdoctoral Researcher, IBM Research, Switzerland
• 2024 – 2026: Postdoctoral Researcher, KAIST, South Korea

[Education] • 2024: Ph.D., Electrical Engineering, KAIST
• 2021: M.S., Electrical Engineering, KAIST
• 2019: B.S., Materials Science and Engineering, GIST

[Research Keywords and Topics] • Semiconductor devices
• 3D integration
• RF and Power devices
• Cryogenic devices
• Quantum computing systems

[Publications (selected)] • J. Jeong, S. K. Kim, Y. -J. Suh, J. Lee, J. Choi, J. P. Kim, B. H. Kim, J. Park, J. Shim, N. Rheem, C. J. Lee, Y. Jo, D. -M. Geum, S. -Y. Park, J. Kim, and S. -H. Kim*, “Cryogenic III-V and Nb electronics integrated on silicon for large-scale quantum computing platforms”, Nature Communications, 15, p. 10809 (2024)
• J. Jeong, S. K. Kim, J. Kim, D. -M. Geum, D. Kim, E. Jo, H. Jeong, J. Park, J. -H. Jang, S. Choi, I. Kwon, and S. -H. Kim*, “Heterogeneous and monolithic 3D integration of III-V-based RF devices on Si CMOS circuits”, ACS Nano, 16, p. 9031 (2022)
• J. Jeong, J. -T. Lim, Y. -J. Suh, N. Rheem, C. -J. Lee, B. H. Kim, J. P. Kim, J. Kim, J. Lee, C. -Y. Kim, and S. Kim*, “Fully Heterogeneous and Monolithic 3D integrated RF platform with III-V HEMTs on Si CMOS for Next-Generation Wireless Communication Systems”, IEEE Symposium on VLSI Technology and Circuits (VLSI), Kyoto, Japan (2025)
• J. Jeong†, C. -J. Lee†, S. -J, Choi, N. Rheem, M. Song, Y. -J. Suh, B. -H. Kim, J. -P. Kim, J. Shim, J. Lee, M. Park, Y. Koh, D. -H. Kim, S. -H. Kim*, “Vertically Integrated Active Power Delivery Network (PDN) for Heterogenous 3D (H3D) Stacked Systems: 3D On-chip Integration of GaN Power Devices on PDN with Direct Heat Spreading Layer Bonding”, IEEE International Electron Device Meeting (IEDM), San Francisco, CA, USA (2024)
• J. Jeong, S. J. Choi, J. Shim, E. Kim, S. K. Kim, B. H. Kim, J. P. Kim, Y. -J. Suh, W. J. Beak, D. -M. Geum, Y. Koh, D. Kim, and S. H. Kim*, “Thermal Management in Multi-Finger GaN-on-Si HEMTs: Understanding and Mitigating Self-Heating and Thermal Crosstalk for Enhanced Device Reliability”, IEEE International Electron Device Meeting (IEDM), San Francisco, CA, USA (2023)

[Awards/ Honors/ Memberships] • 2025, Jang Young Sil Fellow Program (Postdoctoral Researcher Track)
• 2024, Top-ranked student papers in IEDM 2024
• 2023, IEEE EDS PhD Student Fellowship
• 2023, Top-ranked student papers in IEDM 2023
• 2023, Highlight paper in VLSI 2023
• 2022, The 29th Korean Conference on Semiconductors – Excellent paper award
• 2021, The 27th Samsung HumanTech Paper Award – Bronze medal