Research Areas
RF and Electromagnetics, Semiconductor Devices, Photonics and Quantum
Assistant Professor
Jaeyong Jeong
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E mail
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Tel(82) 052-217-2276
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OfficeEngineering Bldg.III, Rm. 401-8
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Lab NameJeong's Electron Device Integration Lab
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Website
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Star Library
Our lab focuses on developing high-performance semiconductor devices and advanced 3D integration technologies for next-generation semiconductor systems. Our research centers on RF and power semiconductor devices, cryogenic electronics, and heterogeneous 3D integration, targeting key applications in artificial intelligence, quantum computing, and next-generation wireless communications. By bridging device physics, circuit-level implementation, and 3D integration, we aim to realize next-generation semiconductor platforms.
[Curriculum Vitae] • 2026 – present: Assistant Professor, UNIST• 2025 – 2026: Postdoctoral Researcher, IBM Research, Switzerland
• 2024 – 2026: Postdoctoral Researcher, KAIST, South Korea [Education] • 2024: Ph.D., Electrical Engineering, KAIST
• 2021: M.S., Electrical Engineering, KAIST
• 2019: B.S., Materials Science and Engineering, GIST [Research Keywords and Topics] • Semiconductor devices
• 3D integration
• RF and Power devices
• Cryogenic devices
• Quantum computing systems [Publications (selected)] • J. Jeong, S. K. Kim, Y. -J. Suh, J. Lee, J. Choi, J. P. Kim, B. H. Kim, J. Park, J. Shim, N. Rheem, C. J. Lee, Y. Jo, D. -M. Geum, S. -Y. Park, J. Kim, and S. -H. Kim*, “Cryogenic III-V and Nb electronics integrated on silicon for large-scale quantum computing platforms”, Nature Communications, 15, p. 10809 (2024)
• J. Jeong, S. K. Kim, J. Kim, D. -M. Geum, D. Kim, E. Jo, H. Jeong, J. Park, J. -H. Jang, S. Choi, I. Kwon, and S. -H. Kim*, “Heterogeneous and monolithic 3D integration of III-V-based RF devices on Si CMOS circuits”, ACS Nano, 16, p. 9031 (2022)
• J. Jeong, J. -T. Lim, Y. -J. Suh, N. Rheem, C. -J. Lee, B. H. Kim, J. P. Kim, J. Kim, J. Lee, C. -Y. Kim, and S. Kim*, “Fully Heterogeneous and Monolithic 3D integrated RF platform with III-V HEMTs on Si CMOS for Next-Generation Wireless Communication Systems”, IEEE Symposium on VLSI Technology and Circuits (VLSI), Kyoto, Japan (2025)
• J. Jeong†, C. -J. Lee†, S. -J, Choi, N. Rheem, M. Song, Y. -J. Suh, B. -H. Kim, J. -P. Kim, J. Shim, J. Lee, M. Park, Y. Koh, D. -H. Kim, S. -H. Kim*, “Vertically Integrated Active Power Delivery Network (PDN) for Heterogenous 3D (H3D) Stacked Systems: 3D On-chip Integration of GaN Power Devices on PDN with Direct Heat Spreading Layer Bonding”, IEEE International Electron Device Meeting (IEDM), San Francisco, CA, USA (2024)
• J. Jeong, S. J. Choi, J. Shim, E. Kim, S. K. Kim, B. H. Kim, J. P. Kim, Y. -J. Suh, W. J. Beak, D. -M. Geum, Y. Koh, D. Kim, and S. H. Kim*, “Thermal Management in Multi-Finger GaN-on-Si HEMTs: Understanding and Mitigating Self-Heating and Thermal Crosstalk for Enhanced Device Reliability”, IEEE International Electron Device Meeting (IEDM), San Francisco, CA, USA (2023) [Awards/ Honors/ Memberships] • 2025, Jang Young Sil Fellow Program (Postdoctoral Researcher Track)
• 2024, Top-ranked student papers in IEDM 2024
• 2023, IEEE EDS PhD Student Fellowship
• 2023, Top-ranked student papers in IEDM 2023
• 2023, Highlight paper in VLSI 2023
• 2022, The 29th Korean Conference on Semiconductors – Excellent paper award
• 2021, The 27th Samsung HumanTech Paper Award – Bronze medal
